Gate electrostatic controllability enhancement in nanotube gate all around field effect transistor

Recently, short channel effects (SCE) and power consumption dissipation problems impose tremendous challenges that need imperative actions to be taken deal with for field effect transistor further scale down as semiconductor technology enters into sub-10 nm node. From 3 node beyond, gate all around steps onto the history stage attributed its improved SCE suppressing ability thanks surrounding structure. Herein, we demonstrate super electrostatic control of a double-gated nanotube (DG NT GAAFET) in comparison (NT nanowire (NW same device parameters designed. Ion boosts 62% 57% have been obtained DG GAAFET those NW GAAFET. In addition, substantially suppressed SCEs due enhanced control, which are certificated by Ioff, subthreshold swing (SS), Ion/Ioff ratio obtained. On other hand, is comparable GAA-FET. Whereas Ioff 1 order smaller, SS almost two times smaller compared GAA-FET, manifesting meliority end, robustness structure, especially double gated one, against length (Lg) scaling has verified Technology Computer Aided Design (TCAD) simulation study.